Scientists at Osaka University have developed a new approach to computer memory that could significantly reduce the energy needed to store and access data. The breakthrough involves a novel way to control magnetic states using electric fields rather than electric current, potentially leading to more efficient computer memory systems.
The research, published in Advanced Science, focuses on improving magnetoresistive random access memory (MRAM), a technology that offers several advantages over conventional computer memory, including the ability to retain data without continuous power input.
“As MRAM devices rely on a non-volatile magnetization state rather than a volatile charge state in capacitors, they are a promising alternative to DRAM in terms of their low power consumption in the standby state,” explains Takamasa Usami, lead author of the study.
The researchers developed a new component that allows electric fields to control magnetic states in memory devices. The key innovation involves creating a special layered structure that includes an ultra-thin layer of vanadium between magnetic and piezoelectric materials. This configuration allows for more reliable control of magnetic properties while using less energy than current approaches.
Traditional computer memory requires constant power to maintain stored data. In contrast, MRAM uses magnetic states to store information, allowing it to retain data even when powered off. However, current MRAM devices still require significant energy to write data, as they rely on electric currents that generate heat during operation.
The team’s breakthrough addresses this limitation by demonstrating that two different magnetic states can be reliably achieved without applying continuous electric fields. This means the memory can maintain stored information with zero power input while still being easily modified when needed.
“Through precise control of the multiferroic heterostructures, two key requirements for implementing practical magnetoelectric MRAM devices are satisfied, namely a non-volatile binary state with zero electric field, and a giant converse magnetoelectric effect,” notes Kohei Hamaya, senior author of the study.
The development could eventually lead to new types of computer memory that combine the speed and reliability of current technologies with significantly reduced energy consumption. This is particularly important as computing devices become more prevalent and data centers continue to grow, driving increased energy demands.
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