Creating sub-1-nm gate lengths for MoS2 transistors
The 0.34 nm gate-length side-wall monolayer MoS2 transistor device structure and characterization. Credit: Nature (2022). DOI: 10.1038 / s41586-021-04323-3 A team ...
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Molybdenum disulfide vertical transistors with channel lengths down to one atomic layer
Credit: Unsplash Vertical transistors, transistors with channel lengths that are dependent on a semiconductor's thickness, could be highly valuable for ...
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