Creating sub-1-nm gate lengths for MoS2 transistors
The 0.34 nm gate-length side-wall monolayer MoS2 transistor device structure and characterization. Credit: Nature (2022). DOI: 10.1038 / s41586-021-04323-3 A team ...
Read moreTag: Transistors
TSMC: shrinking transistors power a growing giant
“We have passed the worst of the chip shortage” was a common line in news headlines and analyst reports late last ...
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Your next CPU could use a lot fewer transistors
The CPUs of the future could use far fewer transistors as a team of researchers have developed a new, adaptive ...
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Fabricating stable, high-mobility transistors for next-generation display technologies
Credit: Tokyo Institute of Technology The trade-off between carrier mobility and stability in amorphous oxide semiconductor-based thin film transistors (TFTs) ...
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Irregular or unexpected behavior in new thin-film transistors shouldn’t negate that research direction
Figure 1. Source-gated transistor (SGT) structure and output characteristics. a) Schematic cross-section of a staggered top-gate SGT, emphasizing the capacitive ...
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IBM and Samsung team up to design vertical transport field effect transistors
Credit: CC0 Public Domain Officials from IBM and Samsung announced at this year's IEDM conference in San Francisco a collaboration ...
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A strategy to remotely modulate the doping of 2D transistors
September 24, 2021 feature Band-modulated WSe2/hBN/MoS2 heterostructure for remote doping. a,b, Schematic (a) and cross-sectional bright-field scanning transmission electron microscopy ...
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Researchers realize vertical organic permeable dual-based transistors for logic circuits
a,b, Circuit diagram (a), static transfer characteristics (b) of the organic complementary inverter measured with VCC = 3.5 V and ...
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Radiofrequency transistors based on high-purity carbon nanotube arrays
Credit: Shi et al. Most next generation wireless communication technologies require integrated radiofrequency devices that can operate at frequencies greater ...
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Molybdenum disulfide vertical transistors with channel lengths down to one atomic layer
Credit: Unsplash Vertical transistors, transistors with channel lengths that are dependent on a semiconductor's thickness, could be highly valuable for ...
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